IRF840
Only 65 left
$1.1500
/ ea
SAMSUNG
IRF840
IRF840Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-ElementN-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
In stock: 320
On our shelves in San Jose. We do not dropship.
Stock on our shelves
Date code and country of origin on every lot.
| Quantity | Date code | Country of origin |
|---|---|---|
| 317 | — | United States |
| 3 | 923 | — |
| 320 | 2 lots on the shelf | |
Need a specific date code, or all of it from a single lot? Tell us on the quote and we will confirm before shipping.
Specifications
| Manufacturer | SAMSUNG |
|---|---|
| Manufacturer part number | IRF840 |
| Our part number | 44899344 |
| Category | Diode & Transistors |
| Description | IRF840Power Field-Effect Transistor, 8A I(D), 500V, 0.85ohm, 1-ElementN-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB |
| Date codes in stock | 923 |
Compliance & export
| Country of origin | United States |
|---|
Classification is provided for reference and confirmed on the invoice. Certificate of conformance and date-code guarantee on request — ask with your order.
Description
IRF840
Similar parts on our shelves
Same part number family — confirm the specs before you swap.