K9K4G08U0M-PCB0

K9K4G08U0M-PCB0 SAMSUNG K9K4G08U0MPCB0 K9K4G08U0M-PCB0000 SLC NAND Flash Parallel 3.3V 4G-bit 512M x 8 25us 48-Pin TSOP-I Offered in 512Mx8bit or 256Mx16bit, the K9K4GXXX0M is 4G bit with spare 128M bit capacity. Its NAND cell provides the most cost-effective solution for the solid state mass storage market. A program operation can be performed in typical 300ms on the 2112- byte(X8 device) or 1056-word(X16 device) page and an erase operation can be performed in typical 2ms on a 128K-byte(X8 device) or 64K-word(X16 device) block. Data in the data page can be read out at 50ns cycle time per byte. The I/O pins serve as the ports for address and data input/output as well as command input. The on-chip write controller automates all program and erase functions including pulse repetition, where required, and internal verification and margining of data. Even the write-intensive systems can take advantage of the K9K4GXXX0M¢s extended reliability of 100K program/erase cycles by providing ECC(Error Correcting Code) with real time mapping-out algorithm. The K9K4GXXX0M is an optimum solution for large nonvolatile storage applications such as solid state file storage and other portable applications requiring non-volatility.