MT41K128M16JT-125IT:K

MT41K128M16JT-125IT:K MT41K128M16JT-125XIT K MT41K128M16JT-125 XIT:K MICRON 128MX 16 DDR3 SDRAM PLASTIC IND ROHS MT41K128M16 - 16 Meg x 16 x 8 banks DDR3L Memory IC 2Gb 128M x 16 Parallel 800MHz 13.75ns 96-FBGA (8x14) The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. VDD = VDDQ = 1.35V (1.283-1.45V)Backward-compatible to VDD = VDDQ = 1.5V±0.075VDifferential bidirectional data strobe8n-bit prefetch architectureDifferential clock inputs (CK, CK#)8 internal banksNominal and dynamic on-die termination (ODT)for data, strobe, and mask signalsProgrammable CAS (READ) latency (CL)Programmable posted CAS additive latency (AL)Programmable CAS (WRITE) latency (CWL)Fixed burst length (BL) of 8 and burst chop (BC) of 4(via the mode register set [MRS])Selectable BC4 or BL8 on-the-fly (OTF)Self refresh modeTC of 95°C- 64ms, 8192-cycle refresh up to 85°C- 32ms, 8192-cycle refresh at >85°C to 95°CSelf refresh temperature (SRT)