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RENESAS

R1QDA4436RBG-18IB000

144-Mbit QDR?II+ SRAM 4-word Burst Architecture(2.5 Cycle Read latency) with ODT

In stock: 173

On our shelves in San Jose. We do not dropship.

Stock on our shelves

Date code and country of origin on every lot.

Lots in stock for R1QDA4436RBG-18IB000
Quantity Date code Country of origin
173 06+ Japan
173 1 lot on the shelf

Need a specific date code, or all of it from a single lot? Tell us on the quote and we will confirm before shipping.

Specifications

Manufacturer RENESAS
Manufacturer part number R1QDA4436RBG-18IB000
Category IC
Date codes in stock 06+
Datasheet

Compliance & export

Country of origin Japan

Classification is provided for reference and confirmed on the invoice. Certificate of conformance and date-code guarantee on request — ask with your order.

Description

RENASASR1QDA4436RBG-18IB000The R1QDA4436RBG is a 4,194,304-word by 36-bit and the R1QDA4418RBG is a 8,388,608-word by 18-bit synchronous quad data rate static RAM fabricated with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique synchronous peripheral circuitry and a burst counter. All input registers are controlled by an input clock pair (K and /K) and are latched on the positive edge of K and /K. These products are suitable for applications which require synchronous operation, high speed, low voltage, high density and wide bit configuration. These products are packaged in 165-pin plastic FBGA package. DOWNLOAD DATASHEET