Parts from Cypress Semiconductor

CY62146EV30LL-45BVXI

CY62146EV30LL-45BVXISRAM 4MBIT PARALLEL 48VFBTRAY ROHS TH

CY7C1041DV33-10ZSXI

CY7C1041DV33-10ZSXI CYPRESS CYPRESS IC, SRAM Chip Async Single 3.3V 4M-bit 256K x 16 10ns 44-Pin TSO

CY62128BLL-70SXI

CY62128BLL-70SXI (CY62128BLL-70SXIT) REELS RAM 1M PARALLEL 32SOIC OBSOLETE

S25FL129P0XMFI001

Flash Memory 128Mb 3V 104MHz Serial NOR Flash

CY2308SXC-2

CY2308SXC-2CLOCK BUFFER, 133.3MHZ, SOIC-1648 per factory tubes

CY62128ELL-45SXI

CY7C131-45JC

CY7C131-45JCDual-Port SRAM, 1KX8, 45ns, CMOS, PQCC52ON TAPE

CY7C1020V33-15ZCT

IC CY7C1020V3315ZCT SRAM Chip Async Single 3.3V 512K-Bit 32K x 16 15ns 44-Pin TSOP-II TAPE

CY2305SC-1

CY2308SC-2

CY2308SC-2CY2308SC2TUBESKU 87184979

CY2308SXC-1

CY23S08SC-1

CY62137EV30LL-45ZSXI

CY62137EV30LL-45ZSXI CYPRESS CYPRESS IC, SRAM 2MBIT 45NS 44TSOP Lead free / RoHS Compliant

CY27H010-45PC

CY27H010-45PCOTP ROM, 128KX8, 45ns PDIP32TUBE-12

FM24CL64BGTR

FM24CL64B-GTRCYPRESS SEMICONDUCTOR FRAM 64Kbit Serial-2Wire 3V/3.3V Automotive 8-Pin SOIC T/R The FM24CL64B is a 64-Kbit nonvolatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is nonvolatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by EEPROM and other nonvolatile memories. Unlike EEPROM, the FM24CL64B performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared with other nonvolatile memories. Also, F-RAM exhibits much lower power during writes than EEPROM since write operations do not require an internally elevated power supply voltage for write circuits. The FM24CL64B is capable of supporting 1014 read/write cycles, or 100 million times more write cycles than EEPROM. These capabilities make the FM24CL64B ideal for nonvolatile memory applications, requiring frequent or rapid writes. Examples range from data logging, where the number of write cycles may be critical, to demanding industrial controls where the long write time of EEPROM can cause data loss. The combination of features allows more frequent data writing with less overhead for the system. The FM24CL64B provides substantial benefits to users of serial (I2C) EEPROM as a hardware drop-in replacement. The device specifications are guaranteed over an industrial temperature range of 40°C to +85°C.

CY7C131-30NC

CY7C131-30NCDual-Port SRAM, 1KX8, 30ns PQFP52

S25FL128P0XMFI001S

S25FL128P0XMFI001S. IC 128M CMOS 3V/104MHZ SPI BUS. ROSH.

CY7C1041DV33-10VXI

CY25560SXI

CY25560SXISKU 23008922

CY25814SXC

CY7C63513C-PVXC

SKU 23008190

S25FL128LAGNFI010Z

S25FL128LAGNFI010Z CYPRESS FLASH

CY7C188-25VIT

CY2308SI-3T