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MT41K1G8SN-107:A
MT41K1G8SN-107:ADDR3L Memory IC 8Gbit Parallel 933 MHz 20 ns 78-FBGA (9x13.2)DRAM 8GBIT PAR 78FBGATRAY ROHS TWOBSOLETE
In stock: 127
$22.0000
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Specifications
| Manufacturer | MICRON TECHNOLOGY INC. |
|---|---|
| Manufacturer part number | MT41K256M16HA-107:E |
| Category | IC |
| Description | DDR3 SDRAM 4GBIT 933MHZ FBGA |
Compliance & export
Classification for this part is not published. We confirm ECCN, HTS and country of origin on request.
Classification is provided for reference and confirmed on the invoice. Certificate of conformance and date-code guarantee on request — ask with your order.
Description
MT41K256M16HA-107:E MIDRON DRM DDR3 SDRAM 4GBIT 933MHZ FBGA
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MT41K512M8RH-107:E
MT41K512M8RH-107:EDDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (9x10.5)TRAY ROHSOBSOLETE
In stock: 151
$6.0000
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MT41K1G8TRF-125 IT:E
MT41K1G8TRF-125 IT:E DRAM 8G PARALLEL 78FBGA
Only 1 left
$14.0000
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MT41K128M16JT-125IT:K
MT41K128M16JT-125IT:K MT41K128M16JT-125XIT K MT41K128M16JT-125 XIT:K MICRON 128MX 16 DDR3 SDRAM PLASTIC IND ROHS MT41K128M16 - 16 Meg x 16 x 8 banks DDR3L Memory IC 2Gb 128M x 16 Parallel 800MHz 13.75ns 96-FBGA (8x14) The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. VDD = VDDQ = 1.35V (1.283-1.45V)Backward-compatible to VDD = VDDQ = 1.5V±0.075VDifferential bidirectional data strobe8n-bit prefetch architectureDifferential clock inputs (CK, CK#)8 internal banksNominal and dynamic on-die termination (ODT)for data, strobe, and mask signalsProgrammable CAS (READ) latency (CL)Programmable posted CAS additive latency (AL)Programmable CAS (WRITE) latency (CWL)Fixed burst length (BL) of 8 and burst chop (BC) of 4(via the mode register set [MRS])Selectable BC4 or BL8 on-the-fly (OTF)Self refresh modeTC of 95°C- 64ms, 8192-cycle refresh up to 85°C- 32ms, 8192-cycle refresh at >85°C to 95°CSelf refresh temperature (SRT)
Only 5 left
$2.5000
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