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MT41K1G8SN-107:A
MT41K1G8SN-107:ADDR3L Memory IC 8Gbit Parallel 933 MHz 20 ns 78-FBGA (9x13.2)DRAM 8GBIT PAR 78FBGATRAY ROHS TWOBSOLETE
In stock: 127
$22.0000
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Specifications
| Manufacturer | MICRON TECHNOLOGY INC. |
|---|---|
| Manufacturer part number | MT41k512M8RH-125IT:E |
| Our part number | mt41k512M8RH-125IT:E |
| Category | IC |
| Description | DRAM 4GBIT PARALLEL 78FBGA |
Compliance & export
| ECCN | EAR99 |
|---|
Classification is provided for reference and confirmed on the invoice. Certificate of conformance and date-code guarantee on request — ask with your order.
Description
MT41k512M8RH-125IT:EDRAM Chip DDR3L SDRAM 4G-Bit 512Mx8 1.35V 78-Pin FBGA TRAY
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MT41K512M8RH-107:E
MT41K512M8RH-107:EDDR3L Memory IC 4Gbit Parallel 933 MHz 20 ns 78-FBGA (9x10.5)TRAY ROHSOBSOLETE
In stock: 151
$6.0000
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MT41K1G8TRF-125 IT:E
MT41K1G8TRF-125 IT:E DRAM 8G PARALLEL 78FBGA
Only 1 left
$14.0000
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MT41K128M16JT-125IT:K
MT41K128M16JT-125IT:K MT41K128M16JT-125XIT K MT41K128M16JT-125 XIT:K MICRON 128MX 16 DDR3 SDRAM PLASTIC IND ROHS MT41K128M16 - 16 Meg x 16 x 8 banks DDR3L Memory IC 2Gb 128M x 16 Parallel 800MHz 13.75ns 96-FBGA (8x14) The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. VDD = VDDQ = 1.35V (1.283-1.45V)Backward-compatible to VDD = VDDQ = 1.5V±0.075VDifferential bidirectional data strobe8n-bit prefetch architectureDifferential clock inputs (CK, CK#)8 internal banksNominal and dynamic on-die termination (ODT)for data, strobe, and mask signalsProgrammable CAS (READ) latency (CL)Programmable posted CAS additive latency (AL)Programmable CAS (WRITE) latency (CWL)Fixed burst length (BL) of 8 and burst chop (BC) of 4(via the mode register set [MRS])Selectable BC4 or BL8 on-the-fly (OTF)Self refresh modeTC of 95°C- 64ms, 8192-cycle refresh up to 85°C- 32ms, 8192-cycle refresh at >85°C to 95°CSelf refresh temperature (SRT)
Only 5 left
$2.5000
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