Parts from ADVANCED MICRO DEVICES

AM29LV008BB-90EC

AM29LV008BB-90EC AMD AM29LV008BB90EC NOR Flash Parallel 3V/3.3V 8M-bit 1M x 8 90ns 40-Pin TSOP 120 X TRAY OBSOLETESKU 00506596 The Am29LV008B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes. The device is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device. This device is manufactured using AMD's 0.32 um process technology, and offers all the features and benefits of the Am29LV008, which was manufactured using 0.5 um process technology. In addition, the Am29LV008B features unlock bypass programming and in-system sector protection/unprotection. The standard device offers access times of 70, 90, and 120 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices. Device programming occurs by executing the program command sequence. This initiates the Embedded Program algorithm"an internal algorithm that automatically times the program pulse widths and verifies proper cell margin. The Unlock Bypass mode facilitates faster programming times by requiring only two write cycles to program data instead of four. Device erasure occurs by executing the erase command sequence. This initiates the Embedded Erase algorithm"an internal algorithm that automatically preprograms the array (if it is not already programmed) before executing the erase operation. During erase, the device automatically times the erase pulse widths and verifies proper cell margin. The host system can detect whether a program or erase operation is complete by observing the RY/BY# pin, or by reading the DQ7 (Data# Polling) and DQ6 (toggle) status bits. After a program or erase cycle has been completed, the device is ready to read array data or accept another command. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. The hardware sector protection feature disables both program and erase operations in any combination of the sectors of memory. This can be achieved in-system or via programming equipment. The Erase Suspend feature enables the user to put erase on hold for any period of time to read data from, or program data to, any sector that is not selected for erasure. True background erase can thus be achieved. The hardware RESET# pin terminates any operation in progress and resets the internal state machine to reading array data. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the system microprocessor to read the boot-up firmware from the Flash memory. The device offers two power-saving features. When addresses have been stable for a specified amount of time, the device enters the automatic sleep mode. The system can also place the device into the standby mode. Power consumption is greatly reduced in both these modes. AMD's Flash technology combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via Fowler-Nordheim tunneling. The data is programmed using hot electron injection.

AM186ES-25VC\W

AM186ES-25VCW AMD(AM186ES-25VC\W)(AM186ES-25V-CW)MICROPROCESSOR 25MHZ TSOPMCU 16-Bit E86 CISC ROMLess 5V 100-P in TQFP20-, 25-, 33-, and 40-MHz operating frequenciesSupports zero-wait-state operation at 25 MHzwith 100-ns static memory (Am186ESLV andAm188ESLV microcontrollers) and 40 MHz with70-ns static memory (Am186ES and Am188ESmicrocontrollers) TRAY OBSOLETE

AM29F800BT-70EF

AM29F800BT70EF (AM29F800BT-70EF) NOR Flash 8M (1MX8/512KX16) Parallel NOR Fl 5V 96 X TRAY

S29PL032J70BAI120

PAL16L8-7PC

AM27C512-90DC

AM27C256-150DC

AM29LV320DB-90EI

AM29LV320DB-90EI AMD Flash, 2M x 16, 48 Pin, Plastic, TSSOP 2513-637

AM29705APC

AM29LV640DU90RWHI

AM29LV640DU90RWHI AMD FLASH 64MBIT X16 2548-160

AM27C64-250DC

AM9128-10DC

AD5327ARUZ

AD5327ARUZ ADVANCED MICRO DEVICES The AD5307/AD5317/AD53271 are quad 8-,10-,12-bit buffered voltage-output DACs in 16-lead TSSOP that operate from single 2.5 V to 5.5 V supplies and consume 400 I¼A at 3 V. Their onchip output amplifiers allow the outputs to swing rail-to-rail with a slew rate of 0.7 V/I¼s. The AD5307/AD5317/AD5327 utilize versatile 3-wire serial interfaces that operate at clock rates up to 30 MHz; these parts are compatible with standard SPI, QSPI, MICROWIRE, and DSP interface standards. The references for the four DACs are derived from two reference pins (one per DAC pair). These reference inputs can be configured as buffered or unbuffered inputs. Each part incorporates a poweron reset circuit, ensuring that the DAC outputs power up to 0 V and remain there until a valid write to the device takes place. There is also an asynchronous active low CLR pin that clears all DACs to 0 V. The outputs of all DACs can be updated simultaneously using the asynchronous LDAC input. Each part contains a power-down feature that reduces the current consumption of the device to 300 nA @ 5 V (90 nA @ 3 V). The parts can also be used in daisy-chaining applications using the SDO pin. All three parts are offered in the same pinout, allowing users to select the amount of resolution appropriate for their application without redesigning their circuit board.

AM29F800BT-90FC

AM29LV081B-90ED

AM29LV081B-90ED AMDSKU 13932354 The Am29LV081B is an 8 Mbit, 3.0 volt-only Flash memory organized as 1,048,576 bytes. The device is offered in a 40-pin TSOP package. The byte-wide (x8) data appears on DQ7DQ0. This device requires only a single, 3.0 volt VCC supply to perform read, program, and erase operations. A standard EPROM programmer can also be used to program and erase the device. This device is manufactured using AMD's 0.32 um process technology, and offers all the features and benefits of the Am29LV081, which was manufactured using 0.5 um process technology. In addition, the Am29LV081B features unlock bypass programming and in-system sector protection/unprotection. The standard device offers access times of 70, 90, and 120 ns, allowing high speed microprocessors to operate without wait states. To eliminate bus contention the device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. The device requires only a single 3.0 volt power supply for both read and write functions. Internally generated and regulated voltages are provided for the program and erase operations. The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the command register using standard microprocessor write timings. Register contents serve as input to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.

AM2965-JCTR

N80C188-25

AM27C256-90DC

AM27C010-200DC

AM27C010-200DCTUBES

AM79C940BJC

AM27C020-120DC

AM27C020-120DC AM27C020120DCNEW 10 X TUBE

AM79C975BKD\W

AM79C975BKD\W AMD

AM29LV116DT-90EI

AM29LV128ML-123REI