Parts from MICRON TECHNOLOGY

MT25QU02GCBB8E12-OSIT

MT25QU02GCBB8E12-OSITTRAY ROHS

MT46H128M16LFCK-5IT:A

MT46H128M16LFCK-5IT:ASDRAM, Mobile LPDDR Memory IC 2Gb (128M x 16) Parallel 200MHz 5.0ns 60-VFBGA (10x11.5)ROHS

MT29F16G08ABCBBH1-12IT:B

JS28F512M29EWLD

JS28F512M29EWLD MICRON TECHNOLOGIES IC FLASH 512MBIT 110NS 56TSOP

MT29F32G08CBABAWPB

MT52C9007EJ-20

MT52C9007EJ-20FIFO X9 ASYNCHRONOUSCUT TAPE, PLCC-32 , OBSOLETE

MT4LSDT1664HY-13ED1

MT29F32G08CBAAAWC:A

MT46H256M32L4SA-48 WT:C

MT46H256M32L4SA-48 WT:C MT46H256M32L4SA DRAM 8G PARALLEL 168TFBGA TRAY

MT29F768G08EEHBBJ4-3RES:B

MT29F768G08EEHBBJ4-3RES:BNAND Memory IC 768Gbit Parallel 333 MHz 132-VBGA (12x18)

MT49H32M18BM-25:B

MT49H32M18BM-25:B MICRON TECHNOLOIESMemory IC 576Mbit Parallel 400 MHz 20 ns 144-uBGA (18.5x11) RLDRAM® 2 is a high-speed memory device designed for high bandwidth data storage, telecommunications, networking, and cache applications, etc. The chip's 8-bank architecture is optimized for sustainable high-speed operation. The DDR I/O interface transfers two data words per clock cycle at the I/O balls. Output data is referenced to the free-running output data clock. Commands, addresses, and control signals are registered at every positive edge of the differential input clock, while input data is registered at both positive and negative edges of the input data clock(s). Read and write accesses are burst-oriented. The burst length (BL) is programmable from 2, 4, or 8 by setting the mode register. The device is supplied with 2.5V and 1.8V for the core and 1.5V or 1.8V for the output drivers. Bank-scheduled refresh is supported with the row address generated internally. The I¼BGA 144-ball package enables ultra high-speed data transfer rates and a simple upgrade path from early generation devices. DOWNLOAD DATASHEET

DM3730CBPD100

DM3730CBPD100DM3730 DIGITAL MEDIA PROCESSORTRAY MT29C4G48MAZBBAKB-48 IT

MT49H16M36BM-25:B

MT49H16M36BM-25:B MT49H16M36BM DRAM Chip RLDRAM 576M-Bit 16Mx36 1.8V 144-Pin U-BGA TRAYS ROHS

MT44K16M36RB-093E:B

MT44K16M36RB-093E:BDRAM Memory IC 576Mbit Parallel 1.066 GHz 8 ns 168-BGA (13.5x13.5)

MT29F32G08AFACAWPC

MT44K16M36PA-093E ES:A

MT44K16M36PA-093E ES:A DRAM Chip RLDRAM3 576Mbit 16Mx36 1.35V 168-Pin FBGA 119 X TRAY

MT9LSDT872AG-10EC7

MT29F64G08CBEDBJ4-12D

MT29F64G08CBEDBJ4-12D FLASH 64G PARALLEL 83MHZ TRAYS ROHS SG TW

MT8LSDT1664AG-133G3

MT8LSDT1664AG-133G32705-019TRAY NEW IN STOCKobsoleteSKU 51426243

MTFC4GCFDK-WT

MT29F512G08CMCABH7-6:A

MT29F256G08EFAABWP-12:A

MT29F256G08EFAABWP-12:A 32GX8 NAND FLASH PLASTIC PBF TSOP 3.3V SYNCH/PAGE READ MASS ROHS COO: SG

4LC1M16C3TG6S

4LC1M16C3TG6S MICRON

B250PU7JK